雜志介紹

Ieee Electron Device Letters雜志介紹

《Ieee Electron Device Letters》是一本以English為主的未開放獲取國際優秀期刊，中文名稱IEEE 電子器件字母，本刊主要出版、報道工程技術-ENGINEERING, ELECTRICAL & ELECTRONIC領域的研究動態以及在該領域取得的各方面的經驗和科研成果，介紹該領域有關本專業的最新進展，探討行業發展的思路和方法，以促進學術信息交流，提高行業發展。該刊已被國際權威數據庫SCIE收錄，為該領域相關學科的發展起到了良好的推動作用，也得到了本專業人員的廣泛認可。該刊最新影響因子為4.1，最新CiteScore 指數為8.2。

本刊近期中國學者發表的論文主要有：

• Development of a Cesium Vapor MEMS Cell for Differential Measurement of Microwave Electromagnetically Induced Transparency

  Author: Zhu, Jingtong; Zhao, Rui; Li, Zhonghao; Hao, Desheng; Zu, Kaixuan; Shi, Yunbo; Tang, Jun; Liu, Jun

• Ultradense One-Memristor Ternary-Content-Addressable Memory Based on Ferroelectric Diodes

  Author: Zhang, Zhaohao; Zhang, Fan; Zhang, Yadong; Xu, Gaobo; Wu, Zhenhua; Zhang, Qingzhu; Li, Yongliang; Yin, Huaxiang; Luo, Jun; Wang, Wenwu; Ye, Tianchun

• Photolithographic Patterning of Polypyrrole on Elastic Polydimethylsiloxane for Flexible and Conformal Organic Electronics

  Author: Zhang, Tao; Wang, Xue; Tong, Yanhong; Sun, Jing; Zhao, Xiaoli; Liu, Xiaoqian; Han, Xu; Tang, Qingxin; Liu, Yichun

• Investigation to the Carrier Transport Properties in Heterojunction-Channel Amorphous Oxides Thin-Film Transistors Using Dual-Gate Bias

  Author: Yang, Huan; Zhou, Xiaoliang; Lu, Lei; Zhang, Shengdong

英文介紹

Ieee Electron Device Letters雜志英文介紹

IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.